Ion-implantation induced anomalous surface amorphization in silicon
نویسندگان
چکیده
منابع مشابه
Mpnte Carlo Simulation of Silicon Amorphization During Ion Implantation
When a sufficient high dose of energetic ions is implanted into a silicon crystal, irradiated zones of the crystal are transformed to an amorphous state. The thickness and spatial location of the amorphous layers determine the type of the extended defects and the number of point defects remaining in the silicon crystal after a recrystallization step. I t is believed that the lateral diffusion o...
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We present a new analytical model to predict the spatial location of amorphous phases in ion-implanted singlecrystalline silicon using results of multidimensional Monte Carlo simulations. Our approach is based on the concept of the critical damage energy density [1]. Additionally, the self-annealing of radiation damage during ion implantation is taken into account because this effect is crucial...
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Cross-sectional TEM studies of ion implantation induced amorphization in a large number of semiconductors have been performed. Samples of Si, AlAs, GaAs, GaP, GaSb, InP, InAs, and ZnSe were simultaneously implanted at 77 K with 20 keV Si at doses between 1 x 10/cm and 1 x 10/cm. A dose of 1 x 10/cm minimized the ion beam induced epitaxial crystallization and sputtering effects. The depth of the...
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Previous computer simulations of multiple 10 keV Si cascades in 3C–SiC demonstrated that many damage-state properties exhibit relatively smooth, but noticeably different, dose dependencies. A more recent analysis of these damage-state properties, which includes additional data at low and intermediate doses, reveals more complex relationships between system energy, swelling, energy per defect, r...
متن کاملPressure-induced amorphization in the nanoindentation of single crystalline silicon
Large-scale molecular dynamics simulations of nanoindentation on a (100) oriented silicon surface were performed to investigate the mechanical behavior and phase transformation of single crystalline silicon. The direct crystalline-to-amorphous transformation is observed during the nanoindentation with a spherical indenter as long as the applied indentation strain or load is large enough. This a...
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ژورنال
عنوان ژورنال: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
سال: 1994
ISSN: 0168-583X
DOI: 10.1016/0168-583x(94)95839-4